P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
DESCRIPTION
ST2305A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
-15V/-3.5A, R
DS(ON)
= 45m-ohm (Typ.)
@VGS = -4.5V
-15V/-3.0A, R
DS(ON)
= 55m-ohm
@VGS = -2.5V
-15V/-2.0A, RDS(ON)= 90m-ohm
@VGS=-1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
05YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
ST2305AS23RG
Package
SOT-23-3L
Part Marking
05YA
※
Process Code : A ~ Z ; a ~ z
※
ST2305AS23RG
S : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150
℃
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70
℃
T
A
=25℃
T
A
=70
℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
-15
±
12
-3.5
-2.8
-10
-1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
℃
℃
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min
Typ Max Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=-250uA
V
DS
=VGS,I
D
=-250uA
V
DS
=0V,V
GS
=
±
12V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
V
DS
≦
-5V,V
GS
=-4.5V
V
DS
≦
-5V,V
GS
=-2.5V
V
GS
=-4.5V,I
D
=-3.5A
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-1.8V,I
D
=-2.0A
V
DS
=-5V,I
D
=-3.5V
I
S
=-1.6A,V
GS
=0V
-15
-0.3
-1.5
±
100
-1
-10
-6
-3
0.045
0.055
V
V
nA
uA
A
Ω
S
V
I
D(on)
R
DS(on)
g
fs
V
SD
0.09
8.5
-0.8 -1.2
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
V
DS
=-10V
V
GS
=-4.5V
I
D
≣
-3.5A
V
DS
=-10V
V
GS
=0V
F=1MH
z
V
DD
=-10V
R
L
=6
Ω
I
D
=-1.0A
V
GEN
=-4.5V
R
G
=6
Ω
10
2
2
485
90
40
10
13
18
15
12
nC
pF
18
22
24
20
nS
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
P Channel Enhancement Mode MOSFET
ST2305A
-3.5A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2305A 2005. V1
